0
<-- nev left start -->

650V25A Discrete IGBT For Inverter

650V25A Discrete IGBT For Inverter
650V25A Discrete IGBT For Inverter
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces,
  • 1.00-
    Product Description

    Features

     

    • High breakdown voltage to 1200V for improved reliability
    • Trench-Stop Technology offering :
    • Very tight parameter distribution
    • High ruggedness, temperature stable behavior
    • Short circuit withstand time – 10s
    • Low VCE(SAT)
    • Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)
    • Enhanced avalanche capability

     

    VCE

     1200

     V

    IC

     25

     A

     VCE(SAT) IC=25A

     1.65

     V


    Product

    Package

    Packaging

    RGW25N120T1

    TO247

    Tube

     Maximum Ratings

    Parameter

    Symbol

    Value

    Unit

    Collector-Emitter Breakdown Voltage

    VCE

    1200

    V

    DC collector current, limited by Tjmax TC = 25°C

    TC = 100°C

     

    IC

     

    50

    25

     

    A

    Diode Forward current, limited by Tjmax TC = 25°C

    TC = 100°C

     

    IF

     

    50

    25

     

    A

    Continuous Gate-emitter voltage

    VGE

    ±20

    V

    Transient Gate-emitter voltage

    VGE

    ±30

    V

    Turn off safe operating area VCE ≤1200V, Tj  150°C

    -

    100

    A

    Pulsed collector current, VGE= 15V, tlimited by Tjmax

    ICM

    100

    A

    Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V

    Tsc

    10

    μs

    Power dissipation , Tj=25℃

    Ptot

    250

    W

    Operating junction temperature

    Tj

    -40...+150

    °C

    Storage temperature

    Ts

    -55...+150

    °C

    Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

     

    -

     

    260

     

    °C

    Thermal Resistance 

    Parameter

    Symbol

    Max. Value

    Unit

    IGBT thermal resistance, junction - case

    Rθ(j-c)

    0.5

    K/W

    Diode thermal resistance, junction - case

    Rθ(j-c)

    1

    K/W

    Thermal resistance, junction - ambient

    Rθ(j-a)

    40

    K/W

    Electrical Characteristics of the IGBTTj= 25 unless otherwise specified):

    Parameter

    Symbol

    Conditions

    Min

    Typ

    Max

    Unit

    Static

    Collector-Emitter

    breakdown voltage

    BVCES

    VGE=0V , IC=250μA

    1200

    -

    -

    V

     

    Gate threshold voltage

     

    VGE(th)

     

    VGE=VCE, IC=250μA

     

    5.2

     

    6.0

     

    6.8

     

    V

     

    Collector-Emitter Saturation voltage

     

    VCE(sat)

    VGE=15V, IC=25A Tj = 25°C

    Tj = 150°C

     

    -

    -

     

    1.65

    2.0

     

    2.05

    -

     

    V

     

    Zero gate voltage collector current

     

    ICES

    VCE = 1200V, VGE = 0V Tj = 25°C

    Tj = 150°C

     

    -

    -

     

    -

    -

     

    100

    1000

     

    μA

    Gate-emitter leakage current

    IGES

    VCE = 0V, VGE = ±20V

    -

    -

    100

    nA

    Transconductance

    gfs

    VCE=20V, IC=20A

    -

    20

    -

    S

     

    Parameter

    Symbol

    Conditions

    Min

    Type

    Max

    Unit

    Dynamic

    Input capacitance

    Cies

     

     

    VCE = 25V, VGE = 0V,

    f = 1MHz

    -

    2340

    -

     

     

    pF

    Output capacitance

    Coes

    -

    105

    -

    Reverse transfer capacitance

    Cres

    -

    60

    -

    Gate charge

    QG

    VCC = 960V, IC = 25A, VGE = 15V

    -

    135

    -

    nC

     

    Short circuit collector current

     

    ICSC

    VGE=15V,tSC10us VCC=600V,

    Tjstart=25°C

     

    -

     

    210

     

    -

     

    A

     Switching Characteristic, Inductive Load

    Parameter

    Symbol

    Conditions

    Min

    Type

    Max

    Unit

    Dynamic , at Tj = 25°C

    Turn-on delay time

    td(on)

     

     

     

    VCC = 600V, IC = 25A, VGE = 0/15V,

    Rg=12Ω

    -

    45

    -

    ns

    Rise time

    tr

    -

    21

    -

    ns

    Turn-on energy

    Eon

    -

    2.2

    -

    mJ

    Turn-off delay time

    td(off)

    -

    200

    -

    ns

    Fall time

    tf

    -

    93

    -

    ns

    Turn-off energy

    Eoff

    -

    0.75

    -

    mJ


    Electrical Characteristics of the DIODETj= 25 unless otherwise specified
    |

    Parameter

    Symbol

    Conditions

    Min

    Type

    Max

    Unit

    Dynamic

    Diode Forward Voltage

    VFM

    IF = 25A

    -

    3.0

    -

    V

    Reverse Recovery Time

    Trr

     

     IF= 25A,di/dt= 200A/μs

    -

    180

    -

    ns

    Reverse Recovery Current

    Irr

    -

    5

    -

    A

    Reverse Recovery Charge

    Qrr

    -

    270

    -

    nC

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078