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650V50A Discrete IGBT For Welding Machine

650V50A Discrete IGBT For Welding Machine
650V50A Discrete IGBT For Welding Machine
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces,
  • 1.00-
    Product Description

    Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine

    VCE

    650

    V

    IC

    50

    A

    VCE(SAT) IC=50A

    1.8

    V


    FEATURE

     

    • High breakdown voltage to 650V for improved reliability
    • Trench-Stop Technology offering :
    • High speed switching
    • High ruggedness, temperature stable
    • Short circuit withstand time – 5s
    • Low VCEsat
    • Easy parallel switching capability due to positive temperature coefficient in VCEsat
    • Enhanced avalanche capability

     

    APPLICATION

     

    • Uninterruptible Power Supplies
    • Inverter
    • Welding Converters
    • PFC applications
    • Converter with high switching frequency

     

    Maximum Ratings (Tj= 25℃ unless otherwise specified)

    Parameter

    Symbol

    Value

    Unit

    Collector-Emitter Breakdown Voltage

    VCE

    650

    V

    DC collector current, limited by Tjmax TC = 25°C

    TC = 100°C

     

    IC

    100-50

     

    A

    Diode Forward current, limited by Tjmax TC = 25°C

    TC = 100°C

     

    IF

    100-50

    A

    Turn off safe operating area VCE ≤650V,

    Tj  150°C

     

    200

    A

    Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V

    Tsc

    5

    μs

    Operating junction temperature Tj

     

    -40...+150

    °C

    Storage temperature

    Ts

    -55...+150

    °C

    Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

     

    260

    °C

     Thermal Resistance

    Parameter

    Symbol

    Max. Value

    Unit

    IGBT thermal resistance, junction - case

    Rθ(j-c)

    0.48

    K/W

    Diode thermal resistance, junction - case

    Rθ(j-c)

    1.1

    K/W

    Thermal resistance, junction - ambient

    Rθ(j-a)

    40

    K/W

    Electrical Characteristics (Tj= 25℃ unless otherwise specified

    Parameter

    Symbol

    Conditions

    Min

    Type

    Max

    Unit

    Static

    Collector-Emitter Breakdown Voltage

     

    BVCES

    VGE=0V , IC=250uA

    650

     

    -

    V

    VGE=0V , IC=1mA

    650

     

     

    V

    Gate Threshold Voltage

    VGE(th)

    VGE=VCE, IC=250uA

    4.1

    5.0

    5.7

    V

    Collector-Emitter Saturation Voltage

     

    VCE(sat)

     

    VGE=15V, IC=50A

    Tj = 25°C

    Tj = 150°C

     

    -

    -

     

     

    1.8

    2.0

     

     

    2.3

    V
    V

    Zero gate voltage collector current

    ICES

    VCE = 650V, VGE = 0V

    Tj = 25°C

    Tj = 150°C

     

     

    0.1

    40
    1000

    μA

    Gate-emitter leakage current

    IGES

    VCE = 0V, VGE = 20V

     

     

    100

    nA

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078