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Battery Charger

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Battery Charger
Battery Charger
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces,
  • 1.00-
    Product Specifications
    • SJ-FET
    Product Description

    All series of our products (good price performance) are confirmed and popular with the worldwide users, our products have been exported far to Europe, North & sounth America,Japan,south Korea,south-east area and Mid-east area etc.Welcomed you to customer-made and do OEM for current products and new products,and we are looking forward to set up one long-term cooperation relations with you too. Please feel free to contact us for further information.


    Packaging and Internal Circuit :

     

    Part Name

    Package

    Marking

    RTW65R041E

    TO247

    RTW65R041E

    Key Performance Parameters :

    Parameter

    Value

    Unit

    VDS @ Tj,max

    700

    V

    RDS(on),max

    41

    m

    Qg,typ

    133.5

    nC

    ID,pulse

    240

    A

    Maximum ratings :

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition

    Min.

    Typ.

    Max.

    Continuous drain current1)

    /D


    -

    80

    A

    TC=25C

    Pulsed drain current2)

    ID, pulse

    -

    -

    240

    A

    TC=25C

    Avalanche energy, single pulse

    EAS

    -

    -

    980

    mJ

    Tc=25oC, VDD=50V, L=10mH, RG=25

    MOSFET dv/dt ruggedness

    dv/dt

    -

    -

    4.7

    V/ns

    VDS=0...150V

    Gate source voltage (static)

    VGS

    -20

    -

    20

    V

    static;

    Gate source voltage (dynamic)

    VGS

    -30

    -

    30

    V

    AC (f>1 Hz)

    Power dissipation

    Ptot

    -

    -

    481

    W

    TC=25C

    Storage temperature

    Tstg

    -55

    -

    150

    C


    Operating junction temperature

    Tj

    -55

    -

    150

    C


    Reverse diode dv/dt3)

    dv/dt

    -

    -

    15

    V/ns

    VDS=0...400V, ISD<=IS, Tj=25C

    Thermal characteristics :

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition

    Min.

    Typ.

    Max.

    Thermal resistance, junction - case

    RthJC

    -

    -

    0.26 C/W

    -


    Thermal resistance, junction - ambient

    RthJA

    -

    -

    62 C/W


    device on PCB, minimal footprint

    Static characteristics :

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition


    Min.

    Typ.

    Max.

    Drain-source breakdown voltage

    V(BR)DSS

    655

    -

    -

    V

    VGS=0V, ID=10mA

    Gate threshold voltage

    V(GS)th

    -


    4.2

    V

    VDS=VGS, ID=250uA

    Zero gate voltage drain current

    IDSS

    -

    -

    1

    uA

    VDS=650V, VGS=0V, Tj=25oC

    Gate-source leakage current

    IGSS

    -

    -

    100

    uA

    VGS=30V, VDS=0V

    Drain-source on-state resistance

    RDS(on)

    -

    0.034

    0.041

    VGS=10V, ID=28A, Tj=25oC

    Gate resistance (Intrinsic)

    RG

    -

    13

    -

    f=1MHz, open drain

    Dynamic characteristics

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition

    Min.

    Typ.

    Max.

    Input capacitance

    Ciss

    -

    5966

    -

    pF

    VGS=0V, VDS=50V, f=1MHz

    Output capacitance

    Coss

    -

    464

    -

    pF

    VGS=0V, VDS=50V, f=1M Hz

    Reverse transfer capacitance

    Crss

    -

    53

    -

    pF

    VGS=0V, VDS=50V, f=1M Hz

    Turn-on delay time

    td(on)

    -

    50.4

    -

    ns

    VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

    Rise time

    tr

    -

    46.8

    -

    ns

    VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

    Turn-off delay time

    td(off)

    -

    326

    -

    ns VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

    Fall time

    tf

    -

    48

    -

    ns

    VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

    Gate charge characteristics :

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition

    Min.

    Typ.

    Max.

    Gate to source charge

    Qgs

    -

    38.6

    -

    nC

    VDD =400V, ID =49.6A, VGS =10V

    Gate to drain charge

    Qgd

    -

    60

    -

    nC

    VDD =400V, ID =49.6A, VGS =10V

    Gate charge total

    Qg

    -

    133.5

    -

    nC

    VDD =400V, ID =49.6A, VGS =10V

    Gate plateau voltage

    Vplateau

    -

    7.0

    -

    V

    VDD =400V, ID =49.6A, VGS =10V

    Reverse diode characteristics :

    Parameter

    Symbol

    Values

    Unit

    Note / Test Condition

    Min.

    Typ.

    Max.

    Diode forward voltage

    VSD

    -

    0.65

    -

    V

    VGS=0V, IF=1A, Tj=25C

    Reverse recovery time

    trr

    -

    802

    -

    ns

    Vr=400V,IF=49.6A,di/dt=100A/us see table 8

    Reverse recovery charge

    Qrr

    -

    23.21

    -

    uC

    Vr=400V,IF=49.6A,di/dt=100A/us see table 8

    Peak reverse recovery current

    Irrm

    -

    50

    -

    A

    Vr=400V,IF=49.6A,di/dt=100A/us see table 8


    Trade Information
    • 20000 Per Month
    • 7-15 Days
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      Phone :+8618001811078