Maximum Rating
Parameter | Symbol | Value | unit |
Collector- Emitter Breakdown voltage | VCE | 1200 | V |
DC collector current, limited by Tjmax | Ic | 80 | A |
Diode forward current, limited by Tjmax | IF | 80 40 | A |
Continuous gate- emitter voltage | VCE | ±20 | V |
Transient gate- emitter voltage | VCE | ±30 | V |
Turn off safe operating area VCE≤1200V,Tj ≤ 150°C |
| 160 | A |
Pulsed collector current VCE =15V, tP limited by Tjmax | ICM | 160 | A |
Diode pulse current tP limited by Tjmax | IFpuls | 10 | µs |
Short circuit withstand time, VCE=15V, ≤600 V | Tsc | 417 | W |
Power dissipation ,Tj= 25°C | Ptot | -40...+150 | °C |
Operating temperature | Tj | -55...+150 | °C |
Storage temperature | Ts | 260 | °C |
Thermal Resistance
Parameter | Symbol | Max. value | Unit |
IGBT thermal resistance, junction – case | R0(j-c) | 0.3 | K/W |
Diode thermal | R0(j-c) | 0.6 | K/W |
Thermal resistance, junction – case | R0(j-a) | 40 | K/W |
Electrical Characteristic of the IGBT
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Static |
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Collector – Emitter breakdown voltage | BVCES | VGE=0V,Ic=250µA | 1200 | 1300 | - | V |
Gate threshold voltage | VGE(th) | VGE=VGE,Ic= 250µA | 5.1 | 5.8 | 6.4 | V |
Collector – Emitter saturation voltage | VCE(sat) | VGE=15V, Ic =40A | - | 2.0
| 2.5 - | V |
Zero gate voltage Collector current | ICES | VCE=1200V, VGE=0V | - | - | 10 | µA |
Gate -emitter leakage current | IGES | VcE=0V, VGE =±20V | - | - | 100 | nA |
Trans conductance | gfs | VCE=20V,Ic=15A | - | 15 | - | S |
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