Discrete IGBTs

Parameter

Symbol

Value

unit

Collector- Emitter Breakdown voltage

V_CE

1200

V

DC collector current, limited by T_jmax
T_c=25°C
T_c=100°C

I_c

80
40

A

Diode forward current, limited by T_jmax
Tc=25°C
Tc=100°C

I_F

80

40

A

Continuous gate- emitter voltage

V_CE

±20

V

Transient gate- emitter voltage

V_CE

±30

V

Turn off safe operating area V_CE≤1200V,T_j ≤ 150°C

160

A

Pulsed collector current V_CE =15V, tP limited by Tjmax

I_CM

160

A

Diode pulse current tP limited by  T_jmax

IF_puls

10

µs

Short circuit withstand time, V_CE=15V, ≤600 V

T_sc

417

W

Power dissipation ,T_j= 25°C

P_tot

-40...+150

°C

Operating temperature

T_j

-55...+150

°C

Storage temperature

T_s

260

°C

Parameter

Symbol

Max. value

Unit

IGBT thermal resistance, junction – case

R₀(j-c)

0.3

K/W

Diode thermal

R₀(j-c)

0.6

K/W

Thermal resistance, junction – case

R₀(j-a)

40

K/W

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Static

Collector – Emitter breakdown voltage

BVCES

VGE=0V,Ic=250µA

1200

1300

-

V

Gate threshold voltage

VGE(th)

VGE=VGE,Ic= 250µA

5.1

5.8

6.4

V

Collector – Emitter saturation voltage

VCE(sat)

VGE=15V, Ic =40A
Tj=25°C
Tj=150°C

-

-

2.0

2.5

2.5

-

V

Zero gate voltage Collector current

ICES

VCE=1200V, VGE=0V
Tj=25°C
Tj=150°C

-

-

-

-

10
2500

µA

Gate -emitter leakage current

IGES

VcE=0V, VGE =±20V

-

-

100

nA

Trans conductance

gfs

VCE=20V,Ic=15A

-

15

-

S