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Discrete IGBTs

Discrete IGBTs
Discrete IGBTs
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces
  • 1.00-
    Product Description

    Symbolic to all the success that we have gained in the industry, remains our status as the leading trader and supplier of an interesting range of Discrete IGBTs. They find their applications in industrial, traction, energy and automotive markets. This Discrete IGBTs  provides an integrated solution with low insertion loss and low power dissipation than shunt solution. The provided load cell is very popular in the market for featuring variegated attributes such as easy installation, compact design, accurate result and user-friendly interface.


    Maximum Rating

    Parameter

    Symbol

    Value

    unit

    Collector- Emitter Breakdown voltage

    VCE

    1200

    V

    DC collector current, limited by Tjmax
    Tc=25°C
    Tc=100
    °C

    Ic

    80
    40

    A

    Diode forward current, limited by Tjmax
    Tc=25°C
    Tc=100
    °C

    IF

    80

    40

    A

    Continuous gate- emitter voltage

    VCE

    ±20

    V

    Transient gate- emitter voltage

    VCE

    ±30

    V

    Turn off safe operating area VCE≤1200V,Tj ≤ 150°C


    160

    A

    Pulsed collector current VCE =15V, tP limited by Tjmax

    ICM

    160

    A

    Diode pulse current tP limited by  Tjmax

    IFpuls

    10

    µs

    Short circuit withstand time, VCE=15V, ≤600 V

    Tsc

    417

    W

    Power dissipation ,Tj= 25°C

    Ptot

    -40...+150

    °C

    Operating temperature

    Tj

    -55...+150

    °C

    Storage temperature

    Ts

    260

    °C

    Thermal Resistance

    Parameter

    Symbol

    Max. value

    Unit

    IGBT thermal resistance, junction – case

    R0(j-c)

    0.3

    K/W

    Diode thermal

    R0(j-c)

    0.6

    K/W

    Thermal resistance, junction – case

    R0(j-a)

    40

    K/W

    Electrical Characteristic of the IGBT

    Parameter

    Symbol

    Condition

    Min.

    Typ.

    Max.

    Unit

    Static







    Collector – Emitter breakdown voltage

    BVCES

    VGE=0V,Ic=250µA

    1200

    1300

    -

    V

    Gate threshold voltage

    VGE(th)

    VGE=VGE,Ic= 250µA

    5.1

    5.8

    6.4

    V

    Collector – Emitter saturation voltage

    VCE(sat)

    VGE=15V, Ic =40A
    Tj=25°C
    Tj=150
    °C

    -

    -

    2.0


    2.5

    2.5

    -

    V

    Zero gate voltage Collector current

    ICES

    VCE=1200V, VGE=0V
    Tj=25°C
    Tj=150
    °C

    -

    -

    -

    -

    10
    2500

    µA

    Gate -emitter leakage current

    IGES

    VcE=0V, VGE =±20V

    -

    -

    100

    nA

    Trans conductance

    gfs

    VCE=20V,Ic=15A

    -

    15

    -

    S

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078