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High Voltage Cool Mosfet

High Voltage Cool Mosfet
High Voltage Cool Mosfet
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces
  • 1.00-
    Product Description
    Rongtech has series Multi-EPI Super-Junction power MOSFET platforms for voltage up 500V to 1000 volts, both with design service and manufacturing capability, including cell, termination design and simulation

    The RTW600V 77A power MOSFET is a Low voltage N channel Multi-EPI Super-Junction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.

    Features

     

    • New revolutionary high voltage technology 
    • Better RDS(on) in TO-247 •Ultra Low gate charge 
    • Periodic avalanche rated 
    • Extreme dv/dt rated 
    • Ultra low effective capacitances 
    • Intrinsc fast-recovery body diode 
    • Pb-free lead planting
    • RDS(ON)=0.041Ω @VGS = 10V VDS = 600V ID (@ VGS=10V) = 35A 

     

     APPLICATIONS

     

    • Consumer 
    • EV Charger 
    • PFC stages for server & telecom 
    • SMPS 
    • UPS
    • Solar 
    • Lighting
    Maximum rating sat Tj = 25 ℃ , unlessotherwise specified.

     

    Symbol

    Parameter

    RTW77N60SD

    Unit

    VDSS

    Drain-Source Voltage

    600

    V

    ID

    Drain Current -Continuous (TC = 25) -Continuous (TC = 100)

    77* 45*

    A

    IDM

    Drain Current - Pulsed (Note 1)

    260

    A

    VGSS

    Gate-Source voltage

    ±30

    V

    EAS

    Single Pulsed Avalanche Energy (Note 2)

    1950

    mJ

    IAR

    Repetitive Avalanche Current (Note 1)

    13

    A

    EAR

    Repetitive Avalanche Energy (Note 1)

    2.5

    mJ

    dv/dt

    Peak Diode Recovery dv/dt (Note 3)

    15

    V/ns

    dVds/dt

    Drain Source voltage slope (Vds=480V)

    50

    V/ns

    PD

    Power Dissipation (TC = 25)

    400

    W

    TJ, TSTG

    Operating and Storage Temperature Range

    -55 to +150

    TL

    Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

    300

    Thermal Characteristics

    Symbol

    Parameter

     RTW77N60SD

    Unit

    RθJC

     Thermal Resistance, Junction-to-Case

    0.32

    /W

    RθCS

    Thermal Resistance, Case-to-Sink Typ.

    0.5

    /W

    RθJA

    Thermal Resistance, Junction-to-Ambient

    62

    /W

     

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078