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High Voltage SJ-FET Mosfet Of Solar Inverter

High Voltage SJ-FET Mosfet Of Solar Inverter
High Voltage SJ-FET Mosfet Of Solar Inverter
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces
  • 1.00-
    Product Description
    Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

    Features

     

    • Multi-Epi process SJ-FET 
    • 850V @TJ = 150℃
    • Typ. RDS(on) = 0.48Ω 
    • Ultra Low Gate Charge (typ. Qg = 13nC) 
    • 100% avalanche tested

     

     Absolute Maximum Ratings

    Symbol

    Parameter

    RTP_B_T80R500S

    RTF80R500S

    Unit

    VDSS

    Drain-Source Voltage

    800

    V

    ID

    DrainCurrent -Continuous (TC = 25) -Continuous (TC = 100)

    10.5* 6.7*

    A

    IDM

    Drain Current - Pulsed (Note 1)

    30*

    A

    VGSS

    Gate-Source voltage

    ±30

    V

    EAS

    Single Pulsed Avalanche Energy (Note 2)

    210

    mJ

    IAR

    Avalanche Current (Note 1)

    1.8

    A

    EAR

    Repetitive Avalanche Energy (Note 1)

    0.32

    mJ

    dv/dt

    Peak Diode Recovery dv/dt (Note 3)

    15

    V/ns

    dVds/dt

    Drain Source voltage slope (Vds=640V)

    50

    V/ns

    PD

    Power Dissipation (TC = 25)

    83

    31

    W

    TJ, TSTG

    Operating and Storage Temperature Range

    -55 to +150

    TL

    Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

    300

     

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078