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High Voltage SJ-FET Mosfet Of UPS Power

High Voltage SJ-FET Mosfet Of UPS Power
High Voltage SJ-FET Mosfet Of UPS Power
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces
  • 1.00-
    Product Description


    Features

    • Multi-Epi process SJ-FET
    • 850V @TJ = 150 °C
    • Typ. RDS(on) = 0.8Ω(TO-220F)
    • Ultra Low Gate Charge (typ. Qg = 9.5nC)
    • 100% avalanche tested

    Absolute Maximum Ratings

    Symbol

    Parameter

    RTF80R850S

    RTP80R850S

    Unit

    VDSS

    Drain-Source Voltage

    800


    V

    ID

    Drain Current -
    Continuous (TC = 25°C)-
    Continuous (TC = 100°C)

    6.6

    4.2


    A

    IDM

    Drain Current - Pulsed  (Note 1)

    20


    A

    VGSS

    Gate-Source voltage

    +30


    V

    EAS

    Single Pulsed Avalanche Energy (Note 2)

    86


    mJ

    IAR

    Avalanche Current  (Note 1)

    1.7


    A

    EAR

    Repetitive Avalanche Energy (Note 1)

    1.7


    A

    dv/dt

    Peak Diode Recovery dv/dt (Note 3)

    15


    V/ns

    dVds/dt

    Drain Source voltage slope (Vds=640V)

    50


    V/ns

    PD

    Power Dissipation (TC = 25°C)

    63

    28

    W

    TJ, TSTG

    Operating and Storage Temperature Range

    -55 to +150

    °C

    TL

    Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

    300

    °C


     

    Trade Information
    • 20000 Per Month
    • 7-15 Days
      Contact Us

      Room 1123-1127,No.81 South QinZhou Road, XuHui Shanghai Shanghai China 86-21-64516109
      Phone :+8618001811078