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1200V40A IGBT PIM Module

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1200V40A IGBT PIM Module
1200V40A IGBT PIM Module
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces
  • 1.00-
    Product Description

    We are manufacturer of 1200V 10A Power Module with all digital meters with moving system with interlocking & limit switches. These power modules are used in various residential as well as commercial places. It also consists of a microprocessor so that it can cut off automatically after it encounter any problem or fault. The 1200V 10A Power Module is available in various size and specifications. Further, they are tested by our quality assurance team to ensure they are free from defects.

    Features :

    • Trench + Filed Stop IGBT technology
    • 10 Short circuit capability
    • VCE (sat) with positive temperature coefficient
    • Low inductance case
    • Fast & soft reverse recovery anti-parallel FWD
    • Isolated copper baseplate using DBC technology


    Typical Applications :

    • Inverter for motor drive
    • Air conditions
    • Uninterruptible power supply


    Absolute Maximum Ratings Tc=25oC unless otherwise noted

    Technical Information : 1200V 10A

    IGBT- Inverter

    Symbol

    Description

    Value

    Unit

    Vces

    Collector-Emitter Voltage

    1200

    V

    Vges

    Gate-emitter Voltage

    +20

    V

    Ic

    Collector Current @ TC = 25oC
    @TC = 100oC

    25
    10

    A

    Icm

    Pulsed Collector Current tp = 1ms

    25

    A

    PD

    Maximum Power Dissipation

    110

    W

    Diode-Inverter

    Symbol

    Description

    Value

    Unit

    VRRM

    Repetitive Peak Reverse Voltage

    1200

    V

    IF

    Diode Continuous forward Current

    10

    A

    IFM

    Diode Maximum forward Current tp = 1ms

    20

    A

    Diode rectifier

    Symbol

    Description

    Value

    Unit

    VRRM

    Repetitive Peak Reverse Voltage

    1600

    V

    IO

    Average Output Current, 50Hz/60Hz, sine wave

    10

    A

    IFSM

    Surge Forward Current VR=0V, tp=10ms, Tj=45oC

    160

    A

    I2t

    I2t-value, VR=0V, t p = 10ms, Tj=45oC

    130

    A2s

    IGBT - brake

    Symbol

    Description

    Value

    Unit

    Vces

    Collector-Emitter Voltage

    1200

    V

    Vges

    Gate-emitter Voltage

    +20

    V

    Ic

    Collector Current @ TC = 25oC
    @TC = 100oC

    25
    10

    A

    Icm

    Pulsed Collector Current tp = 1ms

    25

    A

    PD

    Maximum Power Dissipation

    110

    W

    Diode Brake

    Symbol

    Description

    Value

    Unit

    VRRM

    Repetitive Peak Reverse Voltage

    1200

    V

    IF

    Diode Continuous forward Current

    10

    A

    IFM

    Diode Maximum forward Current tp = 1ms

    20

    A

    Module

    Symbol

    Description

    Value

    Unit

    Tjmax

    Maximum Junction Temperature (inverter, Brake)

    150

    oC

    Tjop

    Operating Junction Temperature

    -40 to + 150

    oC

    TSTG

    Storage Temperature Range

    -40 to + 125

    oC

    VISO

    Isolation Voltage RMS,f=50Hz, t=1 min

    2500

    V

    F

    Mounting Force Per Clamp

    20 to 50

    N

    Trade Information
    • 20000 Per Month
    • 7-15 Days
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      Contact Us

      Room 1123-1127, No.81 South QinZhou Road, XuHui,  Shanghai  Shanghai  China  86-21-64516109
      Phone :+8618001811078