- Piece/Pieces
- 10
- Piece/Pieces
- 1.00-
The RTW600V 77A power MOSFET is a Low voltage N channel Multi-EPI Super-Junction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features of High Voltage Cool Mosfet
- New revolutionary high voltage technology
- Better RDS(on) in TO-247 Ultra Low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Intrinsc fast-recovery body diode
- Pb-free lead planting
- RDS(ON)=0.041 @VGS = 10V VDS = 600V ID (@ VGS=10V) = 35A
APPLICATIONS
- Consumer
- EV Charger
- PFC stages for server & telecom
- SMPS
- UPS
- Solar
- Lighting
Symbol | Parameter | RTW77N60SD | Unit |
VDSS | Drain-Source Voltage | 600 | V |
ID | Drain Current -Continuous (TC = 25) -Continuous (TC = 100) | 77* 45* | A |
IDM | Drain Current - Pulsed (Note 1) | 260 | A |
VGSS | Gate-Source voltage | 30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 1950 | mJ |
IAR | Repetitive Avalanche Current (Note 1) | 13 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 2.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 15 | V/ns |
dVds/dt | Drain Source voltage slope (Vds=480V) | 50 | V/ns |
PD | Power Dissipation (TC = 25) | 400 | W |
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 300 |
Thermal Characteristics
Symbol | Parameter | RTW77N60SD | Unit |
RJC | Thermal Resistance, Junction-to-Case | 0.32 | /W |
RCS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | /W |
RJA | Thermal Resistance, Junction-to-Ambient | 62 | /W |
- 20000 Per Month
- 7-15 Days
