High Voltage SJ-FET Mosfet Of UPS Power

Symbol

Parameter

RTF80R850S

RTP80R850S

Unit

V_DSS

Drain-Source Voltage

800

V

I_D

6.6

4.2

A

I_DM

20

A

V_GSS

Gate-Source voltage

+30

V

E_AS

Single Pulsed Avalanche Energy (Note 2)

86

mJ

I_AR

1.7

A

E_AR

Repetitive Avalanche Energy (Note 1)

1.7

A

dv/dt

Peak Diode Recovery dv/dt (Note 3)

15

V/ns

dVds/dt

Drain Source voltage slope (Vds=640V)

50

V/ns

P_D

Power Dissipation (TC = 25C)

63

28

W

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

C

T_L

Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds

300

C