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Low Voltage Mosfet

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Low Voltage Mosfet
Low Voltage Mosfet
Price And Quantity
  • Piece/Pieces
  • 10
  • Piece/Pieces,
  • 1.00-
    Product Description

    Description:

    The RM series products utilizes Norsem's outstanding standard turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in power management, synchronous rectification, battery protection, load switch and a wide variety of other applications.

    Features and Benefits:

     

    • Standard Turbo MOSFET process technology.
    • Optimized the cell structure.
    • Low on-resistance and low gate charge.
    • Featuring low switching and drive losses.
    • Fast switching and reverse body recovery.
    • High ruggedness and robustness.

    Main Product Characteristics :

    V(BR)DSS

    30V

    RDS(ON)

    5.8m(max.)

    ID

    100A

    Absolute Maximum Ratings  (TC=25oC unless otherwise specified)

    Parameter

    Symbol

    Max.

    Unit

    Drain-Source Voltage

    VDS

    30

    V

    Gate-to-Source Voltage

    VGS

    + 20

    V

    Continuous Drain Current, @ Steady-State 1

    ID @ TC = 25oC

    100

    A

    Continuous Drain Current, @ Steady-State

    ID @ TC = 100oC

    68

    A

    Pulsed Drain Current 2

    IDM

    400

    A

    Power Dissipation

    PD @TA = 25oC

    83

    W

    PD @TA = 100oC

    37.8

    Linear Derating Factor

    TA = 25oC

    0.66

    W/oC

    Single Pulse Avalanche Energy3

    EAS

    780

    mJ

    Junction-to-Case

    RJC

    0.6

    oC/W

    Junction-to-Ambient (PCB Mounted, Steady-State) 4

    RJA

    62.5

    oC/W

    Operating Junction and Storage Temperature Range

    TJ /TSTG

    -55 to + 150

    oC

    Electrical Characteristics (TC=25oC unless otherwise specified)

    Parameter

    Symbol

    Conditions

    Min.

    Typ.

    Max.

    Unit

    Drain-to-Source Breakdown Voltage

    V(BR)DSS

    VGS=0V, ID=250A

    30

    -

    -

    V

    Drain-to-Source Leakage Current

    IDSS

    VDS=30V, VGS=0V

    -

    -

    1

    uA

    TJ=125oC

    -

    -

    50

    Gate-to-Source Forward Leakage IGSS

    IGSS

    VGS =20V

    -

    -

    100

    nA

    VGS =-20V

    -

    -

    -100

    Static Drain-to-Source On- Resistance

    RDS (on)

    VGS=10V, ID=50A

    -

    4.3

    5.8

    m

    VGS=4.5V, ID=15A

    -

    5.2

    7.5

    Gate Resistance

    Rg

    f-1MHz

    -

    1.8

    -

    Gate Threshold Voltage

    VGS (th)

    VDS=VGS, ID=250uA

    1.0

    1.6

    2.6

    V

    Input Capacitance

    Ciss

    VGS=0V, VDS=5V
    f=1MHz

    -

    2180

    -

    pF

    Output Capacitance

    Coss

    -

    270

    -

    Reverse transfer capacitance

    Crss

    -

    210

    -

    Total Gate Charge

    Qg

    ID=30A, VDS=24V, VGS=10V

    -

    47.2

    -

    nC

    Gate-to-Source Charge

    Qgs

    -

    8.8

    -

    Gate-to-Drain("Miller") Charge

    Qgd

    -

    9.6

    -

    Turn-on Delay Time

    td (on)

    VGS=4.5V, VDD=20V,

    ID=60A, RGEN=1.8

    -

    12.3

    -

    nS

    Rise Time

    tr

    -

    87.3

    -

    Turn-Off Delay Time

    td (off)

    -

    140

    -

    Fall Time

    tf

    -

    82.4

    -

    Source-Drain Ratings and Characteristics

    Parameter

    Symbol

    Conditions

    Min.

    Typ.

    Max

    Unit

    Continuous Source Current

    (Body Diode)

    Is

    MOSFET symbol showing

    the integral reverse

    p-n junction diode.

    -

    -

    100

    A

    Pulsed Source Current (Body Diode)

    Ism

    -

    -

    400

    A

    Diode Forward Voltage

    VSD

    IS=20A, VGS=0V

    -

    0.9

    1.2

    V

    Reverse Recovery Time

    trr

    TJ = 25oC, IF =30A, di/dt =

    100A/s

    -

    16.5

    -

    ns

    Reverse Recovery Charge

    Qrr

    -

    6.5

    -

    uC

    Notes :

    1. Pulse test: Pulse Width300us, Duty cycle 2%.
    2. Repetitive rating; pulse width limited by max. junction temperature.
    3. L=0.5mH, VDD=15V, Rg=25,TJ=25oC.
    4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.

    Trade Information
    • 20000 Per Month
    • 7-15 Days
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      Room 1123-1127, No.81 South QinZhou Road, XuHui  Shanghai  Shanghai  China  86-21-64516109
      Phone :+8618001811078