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Medium Voltage Mosfet

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Medium Voltage Mosfet
Medium Voltage Mosfet
Price And Quantity
  • Piece/Pieces
  • 10000
  • Piece/Pieces
  • 1.00-
    Product Description

    Description:

    The RT series products utilizes Rongtech's outstanding grand turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in synchronous rectification, battery protection, sever power supply, motor, micro-inverter etc.

    Features and Benefits:

     

    • Grand Turbo MOSFET process technology.
    • Optimized cell structure for reducing noise and ringing.
    • Low on-resistance and low gate charge.
    • Fast switching and reverse body recovery.
    • Featuring low switching and drive losses.
    • High ruggedness and robustness. 

     

    Main Product Characteristics : 

    V(BR)DSS

    100V

    RDS(ON)

    4.4m(max.)

    ID

    180A

    Absolute Maximum Ratings (TC=25C unless otherwise specified) :

    Parameter

    Symbol

    Max.

    Unit

    Drain-Source Voltage

    VDS

    100

    V

    Gate-to-Source Voltage

    VGS

    + 20

    V

    Continuous Drain Current, @ Steady-State 1

    ID @ TC = 25oC

    180

    A

    Continuous Drain Current, @ Steady-State

    ID @ TC = 100oC

    130

    A

    Pulsed Drain Current 2

    IDM

    720

    A

    Power Dissipation

    PD @TC = 25oC

    208

    W

    Linear Derating Factor

    1.7

    W/oC

    Single Pulse Avalanche Energy3

    EAS

    780

    mJ

    Junction-to-Case

    RJC

    0.6

    C/W

    Junction-to-Ambient (PCB Mounted, Steady-State) 4

    RJA

    62.5

    C/W

    Operating Junction and Storage Temperature Range

    TJ /TSTG

    -55 to + 150

    C

    Electrical Characteristics (TC=25C unless otherwise specified)

    Parameter

    Symbol

    Conditions

    Min.

    Typ.

    Max.

    Unit

    Drain-to-Source Breakdown Voltage

    V(BR)DSS

    VGS=0V, ID=250A

    100

    -

    -

    V

    Drain-to-Source Leakage Current

    IDSS

    VDS=100V, VGS=0V

    -

    -

    1

    uA

    -

    -

    50

    Gate-to-Source Forward Leakage IGSS

    IGSS

    VGS =20V

    -

    -

    100

    nA

    VGS =-20V

    -

    -

    -100

    Static Drain-to-Source On- Resistance

    RDS (on)

    VGS=10V, ID=50A

    -

    3.6

    4.4

    m

    Gate Resistance

    Rg

    -1MHz


    1.8


    Gate Threshold Voltage

    VGS (th)

    VDS=VGS, ID=250uA

    2.2

    3

    3.9

    V

    Input Capacitance

    Ciss

    VGS=0V, VDS=5V
    =1MHz

    -

    8402

    -

    pF

    Output Capacitance

    Coss

    -

    890

    -

    Reverse transfer capacitance

    Crss

    -

    34

    -

    Total Gate Charge

    Qg

    ID=20A, VDS=50V, VGS=10V

    -

    152

    -

    nC

    Gate-to-Source Charge

    Qgs

    -

    45.5

    -

    Gate-to-Drain("Miller") Charge

    Qgd

    -

    45.2

    -

    Turn-on Delay Time

    td (on)

    VGS=10T, VDS=50V, RL=1, RGEN=3

    -

    40

    -

    nS

    Rise Time

    tr

    -

    66

    -

    Turn-Off Delay Time

    td (off)

    -

    101

    -

    Fall Time

    tf

    -

    41

    -

    Source-Drain Ratings and Characteristics

    Parameter

    Symbol

    Conditions

    Min.

    Typ.

    Max

    Unit

    Continuous Source Current

    (Body Diode)

    Is

    MOSFET symbol showing

    the integral reverse

    p-n junction diode.

    -

    -

    180

    A

    Pulsed Source Current (Body Diode)

    Ism

    -

    -

    720

    A

    Diode Forward Voltage

    VSD

    IS=50A, VGS=0V

    -

    1

    1.2

    V

    Reverse Recovery Time

    trr

    TJ = 25C, IF =50A, di/dt =

    100A/s


    82


    ns

    Reverse Recovery Charge

    Qrr


    0.24


    uc

    Notes :

    1. Pulse test: Pulse Width<300us, Duty cycle <2%.
    2. Repetitive rating; pulse width limited by max. junction temperature.
    3. L=0.5mH, VDD=80V, TJ=25oC.
    4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.


    Trade Information
    • 20000 Per Month
    • 7-15 Days
    • Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa
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